Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: VISHAY SI2312BDS-T1-E3 晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV8200 -
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Category: MOSpipeDescription: VISHAY SI2308BDS-T1-E3 晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V9270 -
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Category: MOSpipeDescription: VISHAY SI2328DS-T1-E3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V1904 -
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Category: MOSpipeDescription: INFINEON IRLML6402PBF 晶体管, MOSFET, P沟道, -3.7 A, -20 V, 65 mohm, -4.5 V, -550 mV1707 -
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Category: MOSpipeDescription: The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.9206 -
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Category: MOSpipeDescription: N-channel MOSFET, 100V to 650V, Dior Inc # # MOSFET transistor, Diodes Inc.4387 -
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Category: MOSpipeDescription: RTR030P02 P沟道MOS场效应管 -20V 3A 0.055ohm SOT-23 marking/标记 TV 低导通电阻 内置栅源保护二极管6470 -
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Category: MOSpipeDescription: Infineon SIPMOS® P 通道 MOSFET **Infineon** SIPMOS® 小信号 P 通道 MOSFET 具有多种功能，可能包括增强模式、连续漏极电流（约低至 80A）及宽工作温度范围。 SIPMOS 功率晶体管可用于多种应用，包括电信、eMobility、笔记本、直流/直流设备以及汽车工业。 · 符合 AEC Q101 标准（请参阅数据表） · 无铅引线电镀，符合 RoHS 标准 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能1870 -
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Category: MOSpipeDescription: MULTICOMP 2N7002-7-F 场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-239713
